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IOCG Notes on Laudise Prize.pdf
PDF-Dokument [219.7 KB]

^^^^ Letter from the IOCG on the Laudise Prize award ceremony

 

 

Crystal Growth Fundamentals.  Thermodynamics, Kinetics and Transport

Chapter Preprint to be translated for Synthetic Crystals (China Chemi-cal Industry Press 2022) 

now avalable via ResearchGate:

https://www.researchgate.net/publication/349087856_A_Compressed_Approach_

to_the_Theory_of_Crystal_Growth_Thermodynamics_Kinetics_and_Transport

 

Thermodynamics, Origin, and Control

of Defects

2022

Revised manuscript is now avalable via ResearchGate:

https://www.researchgate.net/publication/229752781_Thermodynamics_Origin_and_

Control_of_Defects/stats

 

Lectures on Crystal Growth and Defects,

 

II-VI Crystal Growth

Online Lecture for Radiation Detection Technologies.
Manhatten USA. February - March 2024

 

CdTe Crystal Growth and Qualities

Online Lecture for Oxide Corp., Japan, November 14 - 18, 2022

 

Fundamentals of Crystal Growth

Online Lecture for the Key Laboratory of Radiation Detection Materials and Devices, MIIT, Northwestern Polytechnical University, Xian, China, September 26 - 30, 2022

 

Fundamentals of CdTe and (Cd,Zn)Te Bulk-Crystal Growth

Online Lecture for the Microelectronic Design Dept. in Ankara, Turkey, August 15 - 19, 2022

 

8th International Workshop on Crystal Growth Technology (IWCGT-8)

Berlin (Germany), May 29 - June 02, 2022

Invited Talk:

Growth Specifis of CdTe and Related Mixed Systems

 

2nd Indian Summer School on Crystal Growth (ISSCG-2022),

16-21 May 2022, in Chennai, India

Online lecture:

Importance of Crystal Growth and Future Topics

 

Video Lecture at December 21, 2021,

for the State Key Lab of Crystal Materials,

Shandong University, China

Crystal Growth of II-VI Compounds

 

Video Lecture at December 22, 2021,

for the State Key Lab of Crystal Materials,

Shandong University, China

Crystal Growth of II-VI Compounds

 

 

Publications

 

Edition:

Handbook of Crystal Growth, Elsevier 2015, Eds: T. Nishinaga (Vol 1a,b), P. Rudolph (Vol. 2a,b), T. Kuech (Vol. 3a,b), see below

http://store.elsevier.com/Handbook-of-Crystal-Growth/isbn-9780444633033/

 

P. Rudolph

Contributions to the development of crystal growth technology

Journal of Crystal Growth 625 (2024) 127456 (pp. 1 – 12)

 

W. Miller, H. Klapper, P. Rudolph, A. Danilewsky

The History of German Association for Crystal Growth

Cryst. Res. Technol. 55 (2020) 1900202 

 

Ch. Frank-Rotsch, N. Dropka, F.-M. Kießling, P. Rudolph

Semiconductor Crystal Growth under the Influence of Magnetic Fields

Cryst. Res. Technol. 55 (2020) 1900115

International Lectures on Crystal Growth
Flyer-IKZ-WinterSchool_19.pdf
PDF-Dokument [248.4 KB]
Rudolph, Dislocation Patterning... CRT 52 (2017) 1
Rudolph Dislocation patterning Review CR[...]
PDF-Dokument [2.1 MB]
Flyer HB Vol II
Flyer HB of CG Vol II.pdf
PDF-Dokument [431.8 KB]
Fundamentals and engineering of defects - a review
Rudolph Defect Engineering.pdf
PDF-Dokument [3.6 MB]
640 kg mc-Si under TMF
640 kg TMF final printed.pdf
PDF-Dokument [1.7 MB]
TMF Efficiency at crystallization
Dropka et al. JCG_efficiency.pdf
PDF-Dokument [2.8 MB]
Influence of travelling magnetic fields on S–L interface shapes of materials with different electrical conductivities
Dropka TMF in various materials.pdf
PDF-Dokument [1.2 MB]
Numerical analysis of the influence of ultrasonic vibration on crystallization processes.
Ubbenjans, Ultrasonic vibration.pdf
PDF-Dokument [565.6 KB]
Characterization of mc-Si solidified in TMF
Kiessling G1 JCG.pdf
PDF-Dokument [1.4 MB]
Rectangular Cz crystals
Jap. J. Crystal Growth galley manuscript[...]
PDF-Dokument [3.9 MB]
Numerical modelling of Czochralski growth of quadratic silicon crystals by means of a travelling magnetic field
Miller rectangular Cz.pdf
PDF-Dokument [609.6 KB]
Verfahren zur Durchmischung von elektrisch leitenden Schmelzen bei Kristallisationsprozessen [Method for mixing of electrically conducting melts during processes of crystallization].
Mischung DE102008027359B4.pdf
PDF-Dokument [1.2 MB]
Verfahren und Anordnung zur Herstellung von Kristallblöcken hoher Reinheit und dazugehörige Kristallisationsanlage
DE 10 2010 028 173.pdf
PDF-Dokument [754.2 KB]
Kristallisationsanlage und Kristallisationsverfahren zur Herstellung eines Blocks aus einem Material, dessen Schmelze elektrisch leitend ist.
DE102010041061B4.pdf
PDF-Dokument [916.0 KB]